Synthesis and optical properties study of GaAs epitaxial nanoparticles on silicon

The integration of direct bandgap III-V materials on Si is one of the main tasks on the way to the development of cheap and highly effective optoelectronic devices. The goal of this work is to study the morphology and optical properties of GaAs nanoparticles grown on Si(111) by molecular beam epitax...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. Conference series Vol. 1400; no. 5; pp. 55038 - 55043
Main Authors Sapunov, G A, Koval, O Yu, Sharov, V A, Dvoretckaia, L N, Mitin, D M, Bolshakov, A D
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2019
Subjects
Atomic force microscopy
Epitaxial growth
Gallium arsenide
Microscopy
Molecular beam epitaxy
Morphology
Nanoparticles
Nanostructure
Optical properties
Optoelectronic devices
Photoluminescence
Physics
Raman spectra
Raman spectroscopy
Room temperature
Silicon substrates
Spectrum analysis
Online AccessGet full text

Cover

More Information
Summary:The integration of direct bandgap III-V materials on Si is one of the main tasks on the way to the development of cheap and highly effective optoelectronic devices. The goal of this work is to study the morphology and optical properties of GaAs nanoparticles grown on Si(111) by molecular beam epitaxy (MBE). Nanostructure morphology is studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Optical properties are studied by photoluminescence (PL) and Raman spectroscopy. Interestingly, despite large lattice mismatch between the silicon substrate and GaAs no sufficient change of Raman spectra was observed for both continuous layer and nanoparticles indicating that they are relaxed. The room temperature PL signal in the red spectral range was obtained from the epitaxial structure. It is demonstrated that high pump optical excitation of the nanostructures can lead to sufficient change of the PL signal typical for photo-oxidized GaAs.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1400/5/055038