Some Initial Results on Modification of aC:H Films by Pulsed Laser Irradiation
Abstract It has recently been shown both theoretically and experimentally that a significant modification of the aC:H films is possible using UV irradiation even with a very low irradiation fluence. Some initial results on the modification of aC:H films with thickness of about 40 nm with UV laser ir...
Saved in:
Published in | Journal of physics. Conference series Vol. 2487; no. 1; pp. 12009 - 12015 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
01.05.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Abstract
It has recently been shown both theoretically and experimentally that a significant modification of the aC:H films is possible using UV irradiation even with a very low irradiation fluence. Some initial results on the modification of aC:H films with thickness of about 40 nm with UV laser irradiation are presented here. The fourth harmonic (λ = 266 nm) of a Nd:YAG laser system (the fundamental wavelength λ = 1064 nm) was used in our experiments. The modified areas of the aC:H films were characterized by optical microscopy, Raman spectroscopy as well as by atomic force microscopy (AFM). A significant modification of aC:H films under certain conditions (laser irradiation fluence and modification modes) to multi-layer graphene accompanied by ablation of a part of the film was established. It was also found that similar aC:H films deposited on 330 nm SiO
2
/Si substrates did not undergo significant modification under these conditions. |
---|---|
ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/2487/1/012009 |