Some Initial Results on Modification of aC:H Films by Pulsed Laser Irradiation

Abstract It has recently been shown both theoretically and experimentally that a significant modification of the aC:H films is possible using UV irradiation even with a very low irradiation fluence. Some initial results on the modification of aC:H films with thickness of about 40 nm with UV laser ir...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. Conference series Vol. 2487; no. 1; pp. 12009 - 12015
Main Authors Milenov, T, Karaivanova, D, Dikovska, A, Kirilov, K, Valcheva, E
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.05.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Abstract It has recently been shown both theoretically and experimentally that a significant modification of the aC:H films is possible using UV irradiation even with a very low irradiation fluence. Some initial results on the modification of aC:H films with thickness of about 40 nm with UV laser irradiation are presented here. The fourth harmonic (λ = 266 nm) of a Nd:YAG laser system (the fundamental wavelength λ = 1064 nm) was used in our experiments. The modified areas of the aC:H films were characterized by optical microscopy, Raman spectroscopy as well as by atomic force microscopy (AFM). A significant modification of aC:H films under certain conditions (laser irradiation fluence and modification modes) to multi-layer graphene accompanied by ablation of a part of the film was established. It was also found that similar aC:H films deposited on 330 nm SiO 2 /Si substrates did not undergo significant modification under these conditions.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2487/1/012009