Influence of annealing temperature on the morphology and crystal structure of Ga-doped ZnO thin films

Ga-doped ZnO (ZnO:Ga) thin films have been deposited on Corning glass substrates by handmade dc magnetron sputtering. The pressure and deposition time respectively were set on 500 mTorr and 60 minutes. The deposition temperature was fixed at 300°C with 30 watts of plasma power. The deposited ZnO:Ga...

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Published inJournal of physics. Conference series Vol. 1170; no. 1; pp. 12066 - 12069
Main Authors Sulhadi, Usriyah, F, Wibowo, E, Astuti, B, Sugianto, Aryanto, D, Marwoto, P
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2019
Subjects
Annealing
Crystal structure
Crystallinity
Deposition
Glass substrates
Grain size
Magnetron sputtering
Morphology
Photovoltaic cells
Thin films
Zinc oxide
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Summary:Ga-doped ZnO (ZnO:Ga) thin films have been deposited on Corning glass substrates by handmade dc magnetron sputtering. The pressure and deposition time respectively were set on 500 mTorr and 60 minutes. The deposition temperature was fixed at 300°C with 30 watts of plasma power. The deposited ZnO:Ga thin films were heated at 300°C, 350°C, and 400°C, respectively. The morphology and crystallinity of ZnO:Ga thin films have been observed with SEM and XRD. The observation with SEM shows that the film morphology is denser and the grain size is smaller when the temperature is increased. The crystallinity of the film increases as the annealing temperature is enhanced from 300°C to 350°C. However, the crystallinity of the ZnO:Ga films decreased when the annealing temperature is 400°C.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1170/1/012066