Band alignment of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 van der Waals heterostructures for highly enhanced photoelectric responses

• Published in: Science China materials Vol. 65; no. 4; pp. 1000 - 1011
• Main Authors: Luo, Mingwei, Lu, Chunhui, Liu, Yuqi, Han, Taotao, Ge, Yanqing, Zhou, Yixuan, Xu, Xinlong
• Format: Journal Article
• Language: English
• Published: Beijing Science China Press 01.04.2022; Springer Nature B.V
• Subjects: Alignment; Bismuth tellurides; Carrier density; Charge efficiency; Charge transfer; Chemical vapor deposition; Chemistry and Materials Science; Chemistry/Food Science; Current carriers; Electrolytes; Electromagnetic absorption; Heterostructures; Materials Science; Optoelectronic devices; Photoelectric effect; Photoelectricity; Photoelectrons; Photometers; Physical vapor deposition; Tin disulfide; Transportation; Te; Se; Bi; SnS; type-II heterostructure; photoelectric response; photodetector; type-I heterostructure
• ISSN: 2095-8226; 2199-4501
• DOI: 10.1007/s40843-021-1820-y

Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance. Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures. Herein, we grew SnS 2 /Bi 2 X 3 (X = Se, Te) van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition. The band alignment, measured by high-resolution X-ray photoelectron spectroscopy, suggested the successful design of type-I SnS 2 /Bi 2 Se 3 and type-II SnS 2 /Bi 2 Te 3 heterostructures. The SnS 2 /Bi 2 X 3 heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector. The photocurrent densities in the type-I SnS 2 /Bi 2 Se 3 and type-II SnS 2 /Bi 2 Te 3 heterostructure-based devices were more than one order of magnitude higher than those of SnS 2 , Bi 2 Se 3 , and Bi 2 Te 3 . The improved photoelectric properties of the SnS 2 /Bi 2 X 3 heterostructures can be explained as follows: (i) the photoexcited electrons and holes are effectively separated in the heterostructures; (ii) the charge-transfer efficiency and carrier density at the interface between the SnS 2 /Bi 2 X 3 heterostructures and the electrolyte are greatly improved; (iii) the formed heterostructures expand the light absorption range. The photoelectric performance was further enhanced by efficient light trapping in the upright SnS 2 . The photoelectric response is higher in the type-I SnS 2 /Bi 2 Se 3 heterostructure than in the type-II SnS 2 /Bi 2 Te 3 heterostructure due to more efficient charge transportation at the type-I SnS 2 /Bi 2 Se 3 heterostructure/electrolyte interface. These results suggest that suitable type-I and type-II heterostructures can be developed for high-performance photodetectors and other optoelectronic devices.