X-ray Photoelectron Spectroscopy characterization of native and RCA-treated Si (111) substrates and their influence on surface chemistry of copper phthalocyanine thin films

• Published in: Thin solid films Vol. 518; no. 10; pp. 2688 - 2694
• Main Authors: Krzywiecki, M., Grządziel, L., Peisert, H., Biswas, I., Chassé, T., Szuber, J.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2010; Elsevier
• Subjects: Carbon; Condensed matter: structure, mechanical and thermal properties; Copper; COPPER PHTHALOCYANINE; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Organic semiconductors; Photoelectron spectroscopy; PHOTOELECTRONS; Physics; RCA treatment; Segregations; Silicon native substrate; Silicon oxide thickness; Silicon substrates; Solid surfaces and solid-solid interfaces; Structure and morphology; thickness; Surface chemistry; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; THIN FILMS; X RAY SPECTROSCOPY; X RAYS; X-ray Photoemission Spectroscopy; Thin films; Silicon native substrate; X-ray Photoemission Spectroscopy; RCA treatment; Organic semiconductors; Copper phthalocyanine; Silicon oxide thickness; Angular resolution; Oxide layer; Segregation; Surface chemistry; Phosphorus additions; Carbon; Layer thickness; Silicon additions; Adsorption; Silicon oxides; Metallophthalocyanine; Binding energy; Growth mechanism; Nitrogen additions; Silicon; X-ray photoelectron spectra
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.09.013

In this paper native and RCA-treated n- and p-doped Si(111) substrates and ultra-thin 16-nm copper phthalocyanine (CuPc) layers deposited thereon were investigated using X-ray Photoemission Spectroscopy and Angle-Resolved X-ray Photoemission Spectroscopy. The oxide layer thickness was determined to be 1.3 nm on the RCA-treated substrates and 0.8 nm on the native ones. The analysis of substrate carbon contamination showed the existence of C–H, C–OH and COOH components on all substrates. The RCA clean removes more readily the carbon components with the OH group from the n-type Si and causes the segregation of the contaminants. The initial carbon species propagate in the evaporated CuPc layer up to a thickness of about 5 nm affecting the shape of the C1s peak. Additionally, the behavior of the binding energy difference between N1s and Si2p peaks upon the CuPc growth shows that there may occur various CuPc molecule adsorption modes on investigated Si substrates. It could be a useful information, from the technological point of view, especially for low dimensional electronic device preparation.