Conduction Mechanism of Se Schottky Contact to n-Type Ge

• Published in: IEEE electron device letters Vol. 33; no. 7; pp. 949 - 951
• Main Authors: Janardhanam, V., Yang-Kyu Park, Hyung-Joong Yun, Kwang-Soon Ahn, Chel-Jong Choi
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2012; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Diodes; Doping; Electronics; Exact sciences and technology; Germanium; Interfaces; Metals; Schottky barriers; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; semiconductor-metal interfaces; Temperature; Temperature measurement; Thermionic emission; Temperature dependence; Schottky diodes; Voltage current curve; Temperature effect; Electric contact; Heterogeneity; Electric field; Thermionic emission; Fermi level; n type semiconductor; Germanium; semiconductor-metal interfaces; Barrier height; Schottky barrier diode; Schottky barrier; Voltage capacity curve
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2196750

The conduction mechanism of Se/n-type-Ge Schottky diodes is investigated using temperature-dependent current-voltage ( I - V ) characteristics. The presence of microscopic inhomogeneity at the Se/Ge interface could be the primary cause of the differences between the barrier heights measured from the I - V and capacitance-voltage ( C - V ) characteristics. The position of the quasi-Fermi level suggested the dominance of thermionic emission in the forward bias region. The electric field dependence of the reverse current revealed that Schottky emission, along with the generation mechanism, has dominance over the current conduction in the reverse bias region.