Temperature dependent current–voltage characteristics of the Zn/ZnO/n-Si/Au–Sb structure with ZnO interface layer grown on n-Si substrate by SILAR method

• Published in: Microelectronic engineering Vol. 88; no. 10; pp. 3075 - 3079
• Main Authors: ALI YILDIRIM, M, GÜZELDIR, B, ATES, A, SAGLAM, M
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2011; Elsevier
• Subjects: Applied sciences; Barrier inhomogeneity; Barriers; Compound structure devices; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Contact resistance, contact potential; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Electronics; Exact sciences and technology; Gold; Interface layer; Interfaces; Mathematical analysis; Physics; Sandwich structure; Sandwich structures; Scanning electron microscopy; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SILAR; Silicon substrates; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Zinc; Zinc oxide; ZnO; Barrier inhomogeneity; ZnO; Interface layer; SILAR; Sandwich structure; Interfacial layer; Rectifier effect; Ohmic contact; Voltage current curve; Polycrystal; Temperature effect; SILAR method; Heterogeneity; Ideality; n type semiconductor; Zinc oxide; Silicon; Series resistance; Scanning electron microscopy; II-VI compound; X ray diffraction; Zinc; Adsorption; Barrier height; Interface; Room temperature
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2011.05.025

This is the first time; it was employed Successive Ionic Layer Adsorption and Reaction (SILAR) method in order to prepare Zn/ZnO/n-Si/Au–Sb sandwich structure. The ZnO interface layer was directly formed on n-type Si substrate using SILAR method. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies were showed that the film is covered well on n-type Si substrate and have polycrystalline structure. An Au–Sb electrode was used as an ohmic contact. The Zn/ZnO/n-Si/Au–Sb sandwich structure demonstrated clearly rectifying behavior by the current–voltage ( I– V) curves studied at room temperature. The sample temperature effect on the current–voltage ( I–V) characteristics of Zn/ZnO/n-Si/Au–Sb structure was investigated in temperature range 80–320 K by steps of 20 K. The parameters such as barrier height, ideality factor and series resistance of this structure were calculated from the forward bias I–V characteristics as a function of sample temperature. It was seen that the ideality factor and series resistance were decreased; the barrier height were increased with increasing temperature. The experimental values of barrier height and ideality factor for this device were calculated as 0.808 eV and 1.519 at 320 K; 0.220 eV and 4.961 at 80 K, respectively. These abnormal behaviors can be explained by the barrier inhomogeneities at the metal–semiconductor ( M– S) interface.