Influence of process parameters on hydrogen silsesquioxane chemistry at low voltage electron beam exposures

• Published in: Microelectronic engineering Vol. 87; no. 5; pp. 914 - 917
• Main Authors: Rio, David, Siegert, Laurent, Derrough, Samir, Constancias, Christophe, Icard, Béatrice, Meynen, Herman, Pain, Laurent
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2010; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Developers; Electric potential; Electron beam lithography; Electronics; Exact sciences and technology; Exposure; FTIR; HSQ; Low voltage; MAPPER; Materials science; Metals. Metallurgy; Methods of nanofabrication; Microelectronic fabrication (materials and surfaces technology); Nanolithography; Physics; Process parameters; Production techniques; Resists; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface treatment; Voltage; Low voltage; Electron beam lithography; FTIR; HSQ; MAPPER; Performance evaluation; High resolution; Silsesquioxane polymer; Electron beam; Coatings; Process conditions; Microelectronic fabrication; Resist; Fourier-transformed infrared spectrometry
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2009.12.003

In the frame of the European project MAGIC, a massively multibeam tool working at 5 kV is under installation in LETI premises. Because of its high resolution capability and suitable high exposure dose, hydrogen silsesquioxane (HSQ) is a good candidate for evaluating tool performances. In order to prepare low voltage exposures on HSQ, we studied three process parameters that are post application bake (PAB) temperature, tetramethylammonium hydroxide (TMAH) based developer concentration and beam acceleration voltage, down to 5 kV. We combined those experiments with physico-chemical characterization in order to better understand resist reactions leading to measured contrast and base dose variations. As a starting point, we achieved 10 nm lines with a pitch of 60 nm at 100 kV. Thus we validated the high contrast capability of HSQ with our process parameters, with automatic coating and development track. By modifying PAB temperature and developer concentration, we found a suitable resist process for low voltage exposure. With proper process conditions, high resolution is achievable at 5 kV, with a lower exposure dose than at higher voltages.