Influence of gas discharge plasma on forming process and properties of complex films
In this paper, we present the research results on the formation mechanism of stoichiometric compounds of complex thin films formed by ion-plasma sputtering in reactive gases environment. The kinetics of complex films' formation and growth is studied as well as the change in characteristics of m...
Saved in:
Published in | Journal of physics. Conference series Vol. 1393; no. 1; pp. 12154 - 12160 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
01.11.2019
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | In this paper, we present the research results on the formation mechanism of stoichiometric compounds of complex thin films formed by ion-plasma sputtering in reactive gases environment. The kinetics of complex films' formation and growth is studied as well as the change in characteristics of microelectronics elements formed on the basis of thin films during their electron-ion bombardment. |
---|---|
ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/1393/1/012154 |