Influence of gas discharge plasma on forming process and properties of complex films

In this paper, we present the research results on the formation mechanism of stoichiometric compounds of complex thin films formed by ion-plasma sputtering in reactive gases environment. The kinetics of complex films' formation and growth is studied as well as the change in characteristics of m...

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Published inJournal of physics. Conference series Vol. 1393; no. 1; pp. 12154 - 12160
Main Authors Zhidik, Y S, Danilina, T I, Chistoedova, A A, Zhidik, E V, Bitner, L R
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2019
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Summary:In this paper, we present the research results on the formation mechanism of stoichiometric compounds of complex thin films formed by ion-plasma sputtering in reactive gases environment. The kinetics of complex films' formation and growth is studied as well as the change in characteristics of microelectronics elements formed on the basis of thin films during their electron-ion bombardment.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1393/1/012154