Improvement of written-state retentivity by scaling down MNOS memory devices

New MNOS retention characteristic phenomena are demonstrated. Shrunk MNOS memory devices are closely evaluated. While charge retentivity of the erased state depends only slightly on silicon nitride thickness, written-state retentivity is improved by reducing silicon nitride thickness. These new phen...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 27; no. 11; pp. L2168 - L2170
Main Authors MINAMI, S, KAMIGAKI, Y, UCHIDA, K, FURUSAWA, K, HAGIWARA, T
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.11.1988
Subjects
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
NMOS technology
EEPROM memory
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Summary:New MNOS retention characteristic phenomena are demonstrated. Shrunk MNOS memory devices are closely evaluated. While charge retentivity of the erased state depends only slightly on silicon nitride thickness, written-state retentivity is improved by reducing silicon nitride thickness. These new phenomena are applied to memory device design. A 1 M bit MNOS EEPROM can be designed with silicon nitride thickness 20.0 nm and programming voltage 10.7 V. These results show the MNOS memory device to be a very promising candidate for Megabit EEPROM's.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.27.l2168