A 28-/37-/39-GHz Linear Doherty Power Amplifier in Silicon for 5G Applications

• Published in: IEEE journal of solid-state circuits Vol. 54; no. 6; pp. 1586 - 1599
• Main Authors: Hu, Song, Wang, Fei, Wang, Hua
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.06.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 5G mobile communication; Bandwidth; Bandwidths; Broadband; Broadband communication; Co-design; Doherty; Efficiency; Impedance; integrated circuits; Linearity; massive multiple-input multiple-output (MIMO); Millimeter waves; Modulation; phased array; power amplifier (PA); Power amplifiers; power back-off (PBO); Power combiners; Power efficiency; Quadrature amplitude modulation; reconfiguration; SiGe BiCMOS; Silicon; transformer
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2019.2902307

This paper presents the first 28-/37-/39-GHz linear Doherty power amplifier (PA) in silicon for broadband fifth-generation (5G) applications. We introduce a new transformer-based on-chip Doherty power combiner that can reduce the impedance transformation ratio (ITR) in power back-off (PBO) and, thus, improve the bandwidth and power-combining efficiency. We also devise a "driver-PA co-design" method that creates power-dependent uneven feeding in the Doherty PA and enhances the Doherty operation without any hardware overhead or bandwidth compromise. For the proof of concept, we implement a 28-/37-/39-GHz PA fully integrated in a standard 130-nm SiGe BiCMOS process, which occupies 1.8 mm<inline-formula> <tex-math notation="LaTeX">^{\mathbf {2}} </tex-math></inline-formula>. The PA achieves a 52% −3-dB small-signal <inline-formula> <tex-math notation="LaTeX">\text{S}_{\mathbf {21}} </tex-math></inline-formula> bandwidth and a 40% −1-dB large-signal saturated output power (<inline-formula> <tex-math notation="LaTeX">\text{P}_{\mathbf {sat}} </tex-math></inline-formula>) bandwidth. At 28/37/39 GHz, the PA achieves +16.8−/+17.1−/+17-dBm <inline-formula> <tex-math notation="LaTeX">\text{P}_{\mathbf {sat}} </tex-math></inline-formula>, +15.2−/+15.5−/+15.4-dBm <inline-formula> <tex-math notation="LaTeX">\text{P}_{\mathbf {1\,dB}} </tex-math></inline-formula>, and superior 1.72/1.92/1.62 times efficiency enhancement over class-B operation at 5.9-/6-/6.7-dB PBO. Moreover, the PA demonstrates multi-gigabit-per-second data rates with excellent efficiency and linearity for 64-quadrature amplitude modulation (64-QAM) in three millimeter-wave (mm-wave) 5G bands. This PA advances the state of the art for Doherty, wideband, and 5G silicon PAs in mm-wave bands. It supports drop-in upgrade for current PAs in existing mm-wave systems and opens doors to compact system solutions for future multiband 5G massive multiple-input multiple-output (MIMO) and phased-array platforms.