Modulating the intralayer and interlayer valley excitons in WS2 through interaction with AlGaN
The fine-tuning of exciton transition and valley polarization process in two-dimensional materials have drawn tremendous research interest due to their rich valley-contrasting physics. Here, we demonstrate highly tunable exciton and valley characteristics in monolayer and bilayer WS 2 through coupli...
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Published in | Science China materials Vol. 66; no. 1; pp. 202 - 210 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Beijing
Science China Press
01.01.2023
Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | The fine-tuning of exciton transition and valley polarization process in two-dimensional materials have drawn tremendous research interest due to their rich valley-contrasting physics. Here, we demonstrate highly tunable exciton and valley characteristics in monolayer and bilayer WS
2
through coupling to AlGaN with different doping levels. A notable redshift in exciton energy is observed by interfacing WS
2
with n-type AlGaN. More interestingly, an interlayer exciton peak emerges as a result of the formation of type-II band alignment in bilayer WS2. Both the interlayer and intralayer exciton energies are tunable by the twist angle of bilayer WS
2
. A high valley polarization of 82.2% is achieved in monolayer WS
2
at 13 K by coupling with n-type AlGaN, due to the faster exciton decay rate through electron-phonon interaction and the reduced intervalley scattering by doping-induced carrier screening. The valley polarization of interlayer exciton is higher than that of the intralayer exciton, due to the suppressed intervalley scattering resulting from the reduced electron-hole interaction. This work has presented a facile and efficient technique to modulate the excitonic properties of 2D materials. The reported high valley polarization in monolayer WS
2
and the discovery of interlayer exciton in bilayer WS
2
will trigger innovative study in valley exciton physics and facilitate emerging valleytronic applications. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 2095-8226 2199-4501 |
DOI: | 10.1007/s40843-022-2138-x |