Interstitial Sn-doping promotes electrocatalytic CO2-to-formate conversion on bismuth

Electrochemical CO 2 reduction (CO 2 RR) is a promising technology to mitigate the greenhouse effect and convert CO 2 to value-added chemicals. Yet, achieving high catalytic activity, selectivity, and stability for target products is still a big challenge. Herein, interstitially Sn-doped Bi (Sn x -B...

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Published inScience China materials Vol. 66; no. 9; pp. 3539 - 3546
Main Authors Xu, Xin, Wei, Yang, Mi, Linhua, Pan, Guodong, He, Yajun, Cai, Siting, Zheng, Chaoyang, Jiang, Yaming, Chen, Bin, Li, Liuyi, Zhong, Shenghong, Huang, Jianfeng, Hu, Wenbin, Yu, Yan
Format Journal Article
LanguageEnglish
Published Beijing Science China Press 01.09.2023
Springer Nature B.V
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Summary:Electrochemical CO 2 reduction (CO 2 RR) is a promising technology to mitigate the greenhouse effect and convert CO 2 to value-added chemicals. Yet, achieving high catalytic activity, selectivity, and stability for target products is still a big challenge. Herein, interstitially Sn-doped Bi (Sn x -Bi, x is the atomic ratio of Sn to Bi, x = 1/2, 1/16, 1/24 or 1/40) nanowire bundles (NBs) are prepared by reducing Sn-doped Bi 2 S 3 . Notably, Sn 1/24 -Bi NBs exhibit ultrahigh formate selectivity over a broad potential window of 1400 mV (Faradaic efficiency over 90% from −0.5 to −1.9 V vs. reversible hydrogen electrode (RHE)) with an industry-compatible current density of −319 mA cm −2 at −1.9 V vs. RHE. Moreover, superior long-term stability for more than 84 h at ∼−200 mA cm −2 is realized. Experimental results and density functional theory (DFT) calculations reveal that interstitially doped Sn optimizes the adsorption affinity of *OCHO intermediate and reduces the electron transfer energy barrier of bismuth catalyst, resulting in the remarkable CO 2 RR performance. This study provides valuable inspiration for the design of doped electrocatalysts with enhanced catalytic activity, selectivity, and durability for electrochemical CO 2 -to-formate conversion.
ISSN:2095-8226
2199-4501
DOI:10.1007/s40843-023-2495-7