Design of a Dual-Band Power Amplifier Using a Simple Method
This letter presents a simple method to design dual-band high-efficiency power amplifiers (PAs). The dual-band coupler is exploited to design the output circuits of the PA. By proper selection of impedance conditions of terminal ports, the dual-band coupler can convert the fundamental impedance of t...
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Published in | IEEE microwave and wireless components letters Vol. 31; no. 2; pp. 149 - 152 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.02.2021
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Subjects | |
Online Access | Get full text |
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Summary: | This letter presents a simple method to design dual-band high-efficiency power amplifiers (PAs). The dual-band coupler is exploited to design the output circuits of the PA. By proper selection of impedance conditions of terminal ports, the dual-band coupler can convert the fundamental impedance of transistor to the standard 50-<inline-formula> <tex-math notation="LaTeX">\Omega </tex-math></inline-formula> load at two frequencies. At the same time, the second harmonic impedance is also controlled without the need for additional tuning. For validation, a dual-band high-efficiency PA is designed and fabricated by using CGH40010F GaN HEMT. Measurements indicate that the designed PA can deliver saturated output power of 41.6 and 42.1 dBm at 1 and 2.3 GHz, respectively. Also, the obtained drain efficiency exceeds 72% at both frequencies. |
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ISSN: | 1531-1309 1558-1764 |
DOI: | 10.1109/LMWC.2020.3047733 |