Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells

Improving materials used to make qubits is crucial to further progress in quantum information processing. Of particular interest are semiconductor-superconductor heterostructures that are expected to form the basis of topological quantum computing. We grew semiconductor indium antimonide nanowires t...

Full description

Saved in:
Bibliographic Details
Published inScience (American Association for the Advancement of Science) Vol. 372; no. 6541; pp. 508 - 511
Main Authors Pendharkar, M, Zhang, B, Wu, H, Zarassi, A, Zhang, P, Dempsey, C P, Lee, J S, Harrington, S D, Badawy, G, Gazibegovic, S, Op Het Veld, R L M, Rossi, M, Jung, J, Chen, A-H, Verheijen, M A, Hocevar, M, Bakkers, E P A M, Palmstrøm, C J, Frolov, S M
Format Journal Article
LanguageEnglish
Published United States The American Association for the Advancement of Science 30.04.2021
American Association for the Advancement of Science (AAAS)
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Improving materials used to make qubits is crucial to further progress in quantum information processing. Of particular interest are semiconductor-superconductor heterostructures that are expected to form the basis of topological quantum computing. We grew semiconductor indium antimonide nanowires that were coated with shells of tin of uniform thickness. No interdiffusion was observed at the interface between Sn and InSb. Tunnel junctions were prepared by in situ shadowing. Despite the lack of lattice matching between Sn and InSb, a 15-nanometer-thick shell of tin was found to induce a hard superconducting gap, with superconductivity persisting in magnetic field up to 4 teslas. A small island of Sn-InSb exhibits the two-electron charging effect. These findings suggest a less restrictive approach to fabricating superconducting and topological quantum circuits.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0036-8075
1095-9203
DOI:10.1126/science.aba5211