A review on radiation‐hardened memory cells for space and terrestrial applications
Summary Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews...
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| Published in | International journal of circuit theory and applications Vol. 51; no. 1; pp. 475 - 499 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Bognor Regis
Wiley Subscription Services, Inc
01.01.2023
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0098-9886 1097-007X |
| DOI | 10.1002/cta.3429 |
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| Abstract | Summary
Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of
QCrit and the impact of
QCrit on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells.
Single Event Upset (SEU) on MOS devices. |
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| AbstractList | Summary
Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of
QCrit and the impact of
QCrit on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells.
Single Event Upset (SEU) on MOS devices. Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of QCrit and the impact of QCrit on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells. Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of and the impact of on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells. |
| Author | Lorenzo, Rohit Pavan Kumar, Mukku |
| Author_xml | – sequence: 1 givenname: Mukku orcidid: 0000-0002-0756-8390 surname: Pavan Kumar fullname: Pavan Kumar, Mukku organization: VIT‐AP University – sequence: 2 givenname: Rohit orcidid: 0000-0003-2044-5798 surname: Lorenzo fullname: Lorenzo, Rohit email: rohit.lorenzo@vitap.ac.in organization: VIT‐AP University |
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Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area.... Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover,... |
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| SubjectTerms | critical charge figure of metric Medical research Military applications Radiation hardening single event multiple node upset single event upset Single event upsets soft error |
| Title | A review on radiation‐hardened memory cells for space and terrestrial applications |
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