A review on radiation‐hardened memory cells for space and terrestrial applications
Summary Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews...
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Published in | International journal of circuit theory and applications Vol. 51; no. 1; pp. 475 - 499 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Bognor Regis
Wiley Subscription Services, Inc
01.01.2023
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Subjects | |
Online Access | Get full text |
ISSN | 0098-9886 1097-007X |
DOI | 10.1002/cta.3429 |
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Summary: | Summary
Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of
QCrit and the impact of
QCrit on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells.
Single Event Upset (SEU) on MOS devices. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 0098-9886 1097-007X |
DOI: | 10.1002/cta.3429 |