A review on radiation‐hardened memory cells for space and terrestrial applications

Summary Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews...

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Bibliographic Details
Published inInternational journal of circuit theory and applications Vol. 51; no. 1; pp. 475 - 499
Main Authors Pavan Kumar, Mukku, Lorenzo, Rohit
Format Journal Article
LanguageEnglish
Published Bognor Regis Wiley Subscription Services, Inc 01.01.2023
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ISSN0098-9886
1097-007X
DOI10.1002/cta.3429

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Summary:Summary Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of QCrit and the impact of QCrit on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells. Single Event Upset (SEU) on MOS devices.
Bibliography:ObjectType-Article-1
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ISSN:0098-9886
1097-007X
DOI:10.1002/cta.3429