Effect of dislocation trails on gold diffusion in Si

• Published in: Physica status solidi. C Vol. 6; no. 8; pp. 1823 - 1826
• Main Authors: Feklisova, O. V., Yakimov, E. B.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.08.2009; WILEY‐VCH Verlag
• Subjects: 61.72.Nn; 61.72.uf; 66.30.J; 81.70.−q; Deformation; Diffusion; Dislocation density; Dislocations; Gold; Reproduction; Silicon; Solid state physics
• ISSN: 1862-6351; 1610-1642; 1610-1642
• DOI: 10.1002/pssc.200881443

Gold diffusion in plastically deformed Si containing dislocation trails has been carried out at temperatures 700 and 750 °C. The substitutional gold depth profile has been studied by successive sample etching and DLTS profiling. It is observed that the gold concentration in plastically deformed Si is about 10 times higher than that in defect‐free Si. Moreover, it is at least 10 times higher than that estimated for the dislocation density revealed in the samples under study. It is concluded that the observed increase in the substitutional gold concentration is associated with defects in the dislocation trails formed behind moving dislocations. It is assumed that both sinks for self‐interstitials and traps for interstitial gold present in the samples under study. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)