Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers

Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a‐Si:H) absorber layers fabricated by the PE‐CVD method with typical thicknesses of 300‐500 nm. The Doppler broadening lineshape parameter S of the layers was...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 7; no. 3-4; pp. 632 - 635
Main Authors Eijt, S. W. H., Zhu, H., Schut, H., Tijssen, M., Zeman, M.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.04.2010
WILEY‐VCH Verlag
Subjects
61.43.Dq
61.72.J
61.80.Ba
68.55.Ln
78.70.Bj
84.60.Jt
Defects
Density
Evolution
Positron annihilation
Reproduction
S parameters
Trapping
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Summary:Positron annihilation depth profiling is applied as a sensitive probe to investigate the defect evolution of hydrogenated amorphous silicon (a‐Si:H) absorber layers fabricated by the PE‐CVD method with typical thicknesses of 300‐500 nm. The Doppler broadening lineshape parameter S of the layers was found to depend significantly on the applied hydrogen‐to‐silane flow ratio during their deposition, related to hydrogen‐induced changes in the microstructure and local composition at the positron trapping site. Light‐soaking degradation induces a time‐dependent variation in the S parameter which seems to correlate with the evolution of defect densities extracted from FT‐Photocurrent Spectroscopy measurements. (© WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.200982882