Hall effect and conductivity in zinc oxide (ZnO) doped by thermal diffusion of indium and copper

• Published in: Physica status solidi. C Vol. 7; no. 3-4; pp. 957 - 959
• Main Authors: Juárez-Diaz, G., Martínez, J., García-Cruz, M. L., Peña-Sierra, R., García, J. A., Pacio, M.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.04.2010; WILEY‐VCH Verlag
• Subjects: 66.30.J; 72.20.Fr; 72.20.Jv; 72.80.Ey; Copper; DIFFUSION; DOPING; ELECTRICAL CONDUCTIVITY; Hall effect; Indium; OXIDES; SINGLE CRYSTALS; SOLID STATE PHYSICS; Thermal diffusion; THERMAL DIFFUSIVITY; ZINC OXIDE
• ISSN: 1862-6351; 1610-1642; 1610-1642
• DOI: 10.1002/pssc.200982851

Measurements of the conductivity and the Hall effect of single crystals were performed on zinc oxide (ZnO) samples after a thermal diffusion of indium (In) and copper (Cu) with different time periods. Single crystals of ZnO were growth by hydrothermal method and annealed previously to diffusion process. Diffusion was carried out in ZnO at 1000 ΩC in N2 atmosphere for 3, 6, and 15 h. Hall effect measurements were carried out using the Van der Pauw configuration with a current of 1 mA and a magnetic field of 0.37 T at room temperature. Results showed an increase in donor concentration from 4.6x1014 cm–3 to 1.15×1017 cm–3 when In is diffused and up to 9.9×1015 cm–3 when Cu is introduced in ZnO. Mobility decreased from 134.9 (undoped ZnO) to 44.7 cm2/V s, in In‐doped, and 101.9 cm2/V s, in Cu‐doped. Resistivity decreased with time from 1.29x102 Ω cm to 1.26 Ω cm and 6.25 Ω cm, in the same order as described. Based on measurements, introduction of indium is faster than copper and the higher concentration of donors is result of substitution of Zn by an ion with a different valence. This is a relative simple method to control the conductivity and donor concentration in single crystals of ZnO. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)