Perovskite semiconductors for direct X-ray detection and imaging

• Published in: Journal of semiconductors Vol. 41; no. 5; pp. 51204 - 46
• Main Authors: Su, Yirong, Ma, Wenbo, Yang, Yang (Michael)
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.05.2020; State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027,China
• Subjects: halide perovskites; optoelectronic materials; X-ray detection; X-ray detection; halide perovskites; optoelectronic materials
• ISSN: 1674-4926; 2058-6140
• DOI: 10.1088/1674-4926/41/5/051204

Halide perovskites have emerged as the next generation of optoelectronic materials and their remarkable performances have been attractive in the fields of solar cells, light-emitting diodes, photodetectors, etc. In addition, halide perovskites have been reported as an attractive new class of X-ray direct detecting materials recently, owning to the strong X-ray stopping capacity, excellent carrier transport, high sensitivity, and cost-effective manufacturing. Meanwhile, perovskite based direct X-ray imagers have been successfully demonstrated as well. In this review article, we firstly introduced some fundamental principles of direct X-ray detection and imaging, and summarized the advances of perovskite materials for these purposes and finally put forward some needful and feasible directions.