Silicon nanocrystals synthesized by electron-beam co-evaporation method and their application for nonvolatile memory

• Published in: Thin solid films Vol. 517; no. 24; pp. 6659 - 6662
• Main Authors: Chen, Chen, Jia, Rui, Liu, Ming, Li, Weilong, Zhu, Chenxin, Li, Haofeng, Zhang, Peiwen, Xie, Changqing, Wang, Qin, Ye, Tianchun
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30.10.2009; Elsevier
• Subjects: Capacitance; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron beam co-evaporation; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Methods of nanofabrication; Nanoscale materials and structures: fabrication and characterization; Nonvolatile memory; Other topics in nanoscale materials and structures; Physics; Si nanocrystals; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Transmission electron microscopy; Vapor phase epitaxy; growth from vapor phase; Electron beam co-evaporation; Si nanocrystals; Capacitance; Nonvolatile memory; Transmission electron microscopy; Memory devices; Hybrid material; Raman spectroscopy; CV characteristic; Non volatile memory; Silicon oxides; Gate oxide; MOS capacitors; Silicon; Memory effect; Nanostructured materials; Gates; Electron beam evaporation; Nanocrystal; Nanomaterial synthesis
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.05.004

In this paper, the silicon nanocrystals (Si NCs)/SiO 2 hybrid films designed for nonvolatile memory applications are prepared by electron-beam co-evaporation of Si and SiO 2. Transmission electron microscopy images and Raman spectra verify the formation of Si NCs. Metal-oxide-semiconductor capacitor structure with Si NCs embedded in the gate oxide is fabricated to characterize the memory behaviors. High-frequency capacitance–voltage and capacitance–time measurements further demonstrate the memory effect of the structure resulting from the charging or discharging behaviors of Si NCs. It is found that the memory window can be changed by adjusting the Si/SiO 2 wt. ratio in source material. The memory devices with Si NCs/SiO 2 hybrid film as floating gate yield good retention characteristics with small charge loss.