Dynamics of the inner ring in photoluminescence of GaAs/AlGaAs indirect excitons

A theoretical description of the diffusion, thermalization and photoluminescence of indirect excitons in low temperature (≈ 1K) GaAs/AlGaAs coupled quantum wells is compared with experiments on their photoluminescence dynamics. The results shown in this contribution demonstrate a highly accurate agr...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 210; no. 1; p. 012050
Main Authors Wilkes, J, Mouchliadis, L, Muljarov, E A, Ivanov, A L, Hammack, A T, Butov, L V, Gossard, A C
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2010
Subjects
Aluminum gallium arsenides
Excitation
Excitons
Gallium arsenide
Low temperature
Photoluminescence
Physics
Quantum wells
Thermalization (energy absorption)
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Summary:A theoretical description of the diffusion, thermalization and photoluminescence of indirect excitons in low temperature (≈ 1K) GaAs/AlGaAs coupled quantum wells is compared with experiments on their photoluminescence dynamics. The results shown in this contribution demonstrate a highly accurate agreement between the two. We concentrate on two key features seen in the photoluminescence pattern: the formation of an inner ring around a tightly focused laser excitation spot and a rapid increase in the intensity from the excitation spot immediately after laser termination – the PL-jump. These striking effects are explained in terms of the diffusion and relaxation thermodynamics of indirect excitons.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/210/1/012050