Low temperature growth of Co2MnSi films on diamond semiconductors by ion-beam assisted sputtering

High quality Schottky junctions using Co2MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co2MnSi/diamond interfaces. Only the Co2MnSi films formed at ∼300–400 °C showed both saturation ma...

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Bibliographic Details
Published inJournal of applied physics Vol. 117; no. 17
Main Authors Nishiwaki, M., Ueda, K., Asano, H.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 07.05.2015
Subjects
Diamond films
Diamonds
Heterostructures
Ion beams
Low temperature
Magnetic saturation
Magnetoresistance
Magnetoresistivity
Semiconductors
Sputtering
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Summary:High quality Schottky junctions using Co2MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co2MnSi/diamond interfaces. Only the Co2MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co2MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co2MnSi films showed clear rectification properties with rectification ratio of more than 107 with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co2MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4917466