A novel SONOS-type flash device with stacked charge trapping layer

Although enhancement in electrical properties of flash devices with HfO 2 charge trapping layer has been reported, there are serious problems in retention characteristics. In this work, a novel SONOS-type flash device with TaN/Al 2O 3/HfO 2/Si 3N 4/SiO 2/Si structure is presented. Experimental resul...

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Published inMicroelectronic engineering Vol. 86; no. 7; pp. 1863 - 1865
Main Authors Ye, Zong-Hao, Chang-Liao, Kuei-Shu, Liu, Te-Chiang, Wang, Tien-Ko, Tzeng, Pei-Jer, Lin, Cha-Hsin, Tsai, Min-Jinn
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.2009
Elsevier
Subjects
Applied sciences
Bandgap engineering
Charge trapping layer
Compound structure devices
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Flash device
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Bandgap engineering
Charge trapping layer
Flash device
Charge carrier trapping
Flash memory
Integrated circuit
Retention factor
Erasure
SONOS structure
Electrical characteristic
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Summary:Although enhancement in electrical properties of flash devices with HfO 2 charge trapping layer has been reported, there are serious problems in retention characteristics. In this work, a novel SONOS-type flash device with TaN/Al 2O 3/HfO 2/Si 3N 4/SiO 2/Si structure is presented. Experimental results show that the program/erase speeds of the proposed devices can be enhanced by over one thousand times and the retention characteristic is improved as well.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.088