PEDOT：PSS Schottky contacts on annealed ZnO films
Polycrystalline ZnO and ITO films on SiO2 substrates are prepared by radio frequency （RF） reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly（3, 4-ethylenedioxythiophene）： poly（styrenesulfonate） （PEDOT：PSS） as the metal el...
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| Published in | Chinese physics B Vol. 20; no. 4; pp. 442 - 445 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.04.2011
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-1056 2058-3834 |
| DOI | 10.1088/1674-1056/20/4/047301 |
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| Abstract | Polycrystalline ZnO and ITO films on SiO2 substrates are prepared by radio frequency （RF） reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly（3, 4-ethylenedioxythiophene）： poly（styrenesulfonate） （PEDOT：PSS） as the metal electrodes. The current-voltage mea- surements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV （n --- 1.93）. The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 ~C, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT：PSS/ZnO/ITO/SiO2. The results are useful for applications such as metal-semiconductor field-effect transistors and UV photodetectors. |
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| AbstractList | Polycrystalline ZnO and ITO films on SiO2 substrates are prepared by radio frequency （RF） reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly（3, 4-ethylenedioxythiophene）： poly（styrenesulfonate） （PEDOT：PSS） as the metal electrodes. The current-voltage mea- surements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV （n --- 1.93）. The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 ~C, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT：PSS/ZnO/ITO/SiO2. The results are useful for applications such as metal-semiconductor field-effect transistors and UV photodetectors. |
| Author | 朱亚彬 胡伟 纳杰 何帆 周岳亮 陈聪 |
| AuthorAffiliation | School of Science, Beijing Jiaotong University, Beijing 100044, China Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| CitedBy_id | crossref_primary_10_1088_1674_1056_23_7_077303 crossref_primary_10_1088_1674_1056_23_2_028802 crossref_primary_10_1007_s11664_020_07980_8 crossref_primary_10_1016_j_apsusc_2014_05_122 crossref_primary_10_1088_1674_1056_23_1_018504 crossref_primary_10_1007_s40089_016_0187_6 crossref_primary_10_1088_1674_1056_20_10_105203 |
| Cites_doi | 10.7498/aps.55.6085 10.1063/1.122853 10.1038/nmat1284 10.1088/1674-1056/18/4/054 10.1063/1.1604173 10.1088/1674-1056/18/4/055 10.1063/1.1713034 10.1063/1.2989125 10.1063/1.371707 10.1063/1.1801674 10.1063/1.2993340 10.1088/1674-1056/19/8/087204 10.1063/1.2789697 10.1016/j.sse.2003.07.006 10.1063/1.3459139 10.1016/0031-9163(65)90295-7 10.1063/1.2956419 |
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| Notes | TP333 TN304.21 11-5639/O4 Schottky contacts, rectifying characteristic, annealed ZnO film |
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| Snippet | Polycrystalline ZnO and ITO films on SiO2 substrates are prepared by radio frequency （RF） reactive magnetron sputtering. Schottky contacts are fabricated on... |
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| StartPage | 442 |
| SubjectTerms | PEDOT PSS ZnO薄膜 扫描电子显微镜 氧化锌薄膜 肖特基接触 金属氧化物半导体场效应晶体管 |
| Title | PEDOT：PSS Schottky contacts on annealed ZnO films |
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