PEDOT：PSS Schottky contacts on annealed ZnO films

• Published in: Chinese physics B Vol. 20; no. 4; pp. 442 - 445
• Main Author: 朱亚彬 胡伟 纳杰 何帆 周岳亮 陈聪
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.04.2011
• Subjects: PEDOT; PSS; ZnO薄膜; 扫描电子显微镜; 氧化锌薄膜; 肖特基接触; 金属氧化物半导体场效应晶体管
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/20/4/047301

Polycrystalline ZnO and ITO films on SiO2 substrates are prepared by radio frequency （RF） reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly（3, 4-ethylenedioxythiophene）： poly（styrenesulfonate） （PEDOT：PSS） as the metal electrodes. The current-voltage mea- surements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV （n --- 1.93）. The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 ~C, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT：PSS/ZnO/ITO/SiO2. The results are useful for applications such as metal-semiconductor field-effect transistors and UV photodetectors.