Oxygen plasma assisted high performance solution-processed Al2Ox gate insulator for combustion-processed InGaZnOx thin film transistors

• Published in: Journal of applied physics Vol. 117; no. 3
• Main Authors: Wang, Han, Xu, Wangying, Zhou, Shuang, Xie, Fangyan, Xiao, Yubin, Ye, Lei, Chen, Jian, Xu, Jianbin
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.01.2015
• Subjects: Annealing; Applied physics; Combustion; Dielectrics; Indium gallium zinc oxide; Oxygen plasma; Plasma; Semiconductor devices; Thin film transistors; Thin films; Threshold voltage; Transistors
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.4906107

The effects of oxygen-plasma treatment on solution-processed Al2Ox gate dielectrics for InGaZnOx (IGZO) thin film transistors (TFTs) are investigated in this paper. Thin films of amorphous Al2Ox are successfully fabricated by annealing temperature of 300 °C. Utilizing oxygen-plasma treated gate dielectrics, combustion-processed IGZO TFTs, which are annealed at a temperature of 300 °C, show a mobility of 7.3 cm2 V−1 s−1, a threshold voltage of −0.3 V, an on-off current ratio of 1 × 105, a subthreshold swing of 160 mV/decade, when operating with a voltage ranging from −2 V to +5 V. Our experimental results demonstrate that oxygen-plasma treatment can remarkably improve dielectric performance. This is presumably due to the passivation of interfacial and bulk traps, and the reduced concentration of oxygen vacancies.