Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(1 0 0) substrates

• Published in: Microelectronic engineering Vol. 82; no. 2; pp. 93 - 98
• Main Authors: Han, Dedong, Wang, Yi, Tian, Dayu, Wang, Wei, Liu, Xiaoyan, Kang, Jinfeng, Han, Ruqi
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2005; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Interfaces; Ni-Germanide; Schottky Contacts; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Schottky Contacts; Ge; Ni-Germanide; Annealing; Voltage current curve; Nickel Germanides; Annealing temperature; Electric contact; Fabrication property relation; Optimization; Barrier height; Cathodic sputtering; Titanium Germanides; Schottky barrier; Voltage capacity curve; Electrical characteristic
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.06.004

In this study, we investigated fabrication and characteristics of germanides Schottky contacts on germanium. Ti- and Ni-germanides were fabricated on n-Ge(1 0 0) substrates by sputtering metal Ti or Ni on Ge followed by a furnace annealing. The influence of annealing temperature on the electrical properties of Ti- and Ni-germanide on n-Ge(1 0 0) substrates was investigated. The low temperature ∼300 °C annealing helped to obtain the optimized Schottky contact characteristics in both Ti-germanide/Ge and Ni-germanide/Ge substrates contacts. The well-behaved Ti-germanides/ n-Ge Schottky contact with 0.34 eV barrier height was obtained by using a 300 °C annealing process.