Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(1 0 0) substrates
In this study, we investigated fabrication and characteristics of germanides Schottky contacts on germanium. Ti- and Ni-germanides were fabricated on n-Ge(1 0 0) substrates by sputtering metal Ti or Ni on Ge followed by a furnace annealing. The influence of annealing temperature on the electrical pr...
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Published in | Microelectronic engineering Vol. 82; no. 2; pp. 93 - 98 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.10.2005
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | In this study, we investigated fabrication and characteristics of germanides Schottky contacts on germanium. Ti- and Ni-germanides were fabricated on
n-Ge(1
0
0) substrates by sputtering metal Ti or Ni on Ge followed by a furnace annealing. The influence of annealing temperature on the electrical properties of Ti- and Ni-germanide on
n-Ge(1
0
0) substrates was investigated. The low temperature ∼300
°C annealing helped to obtain the optimized Schottky contact characteristics in both Ti-germanide/Ge and Ni-germanide/Ge substrates contacts. The well-behaved Ti-germanides/
n-Ge Schottky contact with 0.34
eV barrier height was obtained by using a 300
°C annealing process. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2005.06.004 |