Efficiency-loss analysis of monolithic perovskite/silicon tandem solar cells by identifying the patterns of a dual two-diode model’s current-voltage curves

• Published in: Journal of semiconductors Vol. 44; no. 8; pp. 82702 - 82
• Main Authors: Zeng, Yuheng, Ding, Zetao, Liu, Zunke, Liu, Wei, Liao, Mingdun, Yang, Xi, Ying, Zhiqin, Sun, Jingsong, Sheng, Jiang, Yan, Baojie, He, Haiyan, Shou, Chunhui, Yang, Zhenhai, Ye, Jichun
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.08.2023; Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China; Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology &Engineering,CAS,Ningbo 315201,China%Zhejiang Energy Group R & D,Hangzhou 310003,China; University of Chinese Academy of Sciences,Beijing 100049,China; Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology &Engineering,CAS,Ningbo 315201,China%Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China
• Subjects: dual two-diode model; efficiency-loss analysis; monolithic perovskite/silicon tandem solar cell; SPICE numerical simulation; monolithic perovskite/silicon tandem solar cell; dual two-diode model; efficiency-loss analysis; SPICE numerical simula-tion
• ISSN: 1674-4926; 2058-6140
• DOI: 10.1088/1674-4926/44/8/082702

Abstract In this work, we developed a simple and direct circuit model with a dual two-diode model that can be solved by a SPICE numerical simulation to comprehensively describe the monolithic perovskite/crystalline silicon (PVS/c-Si) tandem solar cells. We are able to reveal the effects of different efficiency-loss mechanisms based on the illuminated current density-voltage ( J - V ), semi-log dark J - V , and local ideality factor ( m - V ) curves. The effects of the individual efficiency-loss mechanism on the tandem cell’s efficiency are discussed, including the exp( V / V T ) and exp( V /2 V T ) recombination, the whole cell’s and subcell’s shunts, and the Ohmic-contact or Schottky-contact of the intermediate junction. We can also fit a practical J - V curve and find a specific group of parameters by the trial-and-error method. Although the fitted parameters are not a unique solution, they are valuable clues for identifying the efficiency loss with the aid of the cell’s structure and experimental processes. This method can also serve as an open platform for analyzing other tandem solar cells by substituting the corresponding circuit models. In summary, we developed a simple and effective methodology to diagnose the efficiency-loss source of a monolithic PVS/c-Si tandem cell, which is helpful to researchers who wish to adopt the proper approaches to improve their solar cells.