Recovery study of negative bias temperature instability

• Published in: Microelectronic engineering Vol. 86; no. 7; pp. 1888 - 1890
• Main Authors: Wang, Miaomiao, Zafar, Sufi, Stathis, James H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2009; Elsevier
• Subjects: Applied sciences; Dependence of recovery on interface; Dependence of recovery on stressing temperature; Dependence of recovery on stressing time; Dependence of recovery on stressing voltage; Electronics; Exact sciences and technology; NBTI recovery; p-Channel field effect transistors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; p-Channel field effect transistors; NBTI recovery; Dependence of recovery on stressing temperature; Dependence of recovery on stressing voltage; Dependence of recovery on stressing time; Dependence of recovery on interface; Thermal stress; Negative bias temperature instability; Electric stress; Recovery time; Field effect transistor; p channel; temperature; High k dielectric; Reliability; Damaging; Dependence of recovery on stressing
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2009.03.026

In this work, we report a study of negative bias temperature instability (NBTI) recovery in high-k/metal-gate p-channel field effect transistors (pFETs) with different interfaces. New results on the dependence of recovery on interface, stressing voltage ( V s), stressing temperature and stressing time ( t s) are shown.