Reliability studies of narrow Cu lines

• Published in: Microelectronic engineering Vol. 82; no. 3; pp. 645 - 649
• Main Authors: Schindler, Günther, Penka, Sabine, Steinlesberger, Gernot, Traving, Martin, Steinhögl, Werner, Engelhardt, Manfred
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2005; Elsevier Science
• Subjects: Applied sciences; Copper; Design. Technologies. Operation analysis. Testing; Electromigration; Electronics; Exact sciences and technology; Integrated circuits; Microelectronic fabrication (materials and surfaces technology); Nano interconnects; Reliability; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Electromigration; Nano interconnects; Reliability; Copper; Barrier layer; Metallizing; Durability; Failures; Damascene process; Contact line; Microelectronic fabrication; Interconnection; Integrated circuit; Diffusion barrier; Electrodiffusion; Current density; Damaging
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.07.069

Cu damascene lines with dimensions of 100 nm and less were prepared using adapted standard processes. For metallization standard Cu damascene processes were used, with reduced thicknesses for diffusion barrier and Cu seed layer. The lines thus obtained were subjected to electromigration tests at elevated current densities and temperatures. Early breakdowns could be observed for thin lines, while wider lines had a longer time to failure. The results indicate an underlying strong correlation between the barrier layer thickness and the time to failure.