Reliability studies of narrow Cu lines

Cu damascene lines with dimensions of 100 nm and less were prepared using adapted standard processes. For metallization standard Cu damascene processes were used, with reduced thicknesses for diffusion barrier and Cu seed layer. The lines thus obtained were subjected to electromigration tests at ele...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 82; no. 3; pp. 645 - 649
Main Authors Schindler, Günther, Penka, Sabine, Steinlesberger, Gernot, Traving, Martin, Steinhögl, Werner, Engelhardt, Manfred
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.12.2005
Elsevier Science
Subjects
Applied sciences
Copper
Design. Technologies. Operation analysis. Testing
Electromigration
Electronics
Exact sciences and technology
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Nano interconnects
Reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Electromigration
Nano interconnects
Reliability
Copper
Barrier layer
Metallizing
Durability
Failures
Damascene process
Contact line
Microelectronic fabrication
Interconnection
Integrated circuit
Diffusion barrier
Electrodiffusion
Current density
Damaging
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Summary:Cu damascene lines with dimensions of 100 nm and less were prepared using adapted standard processes. For metallization standard Cu damascene processes were used, with reduced thicknesses for diffusion barrier and Cu seed layer. The lines thus obtained were subjected to electromigration tests at elevated current densities and temperatures. Early breakdowns could be observed for thin lines, while wider lines had a longer time to failure. The results indicate an underlying strong correlation between the barrier layer thickness and the time to failure.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2005.07.069