Recombination at silicon dangling bonds

• Published in: Thin solid films Vol. 487; no. 1; pp. 132 - 136
• Main Authors: Boehme, C., Friedrich, F., Ehara, T., Lips, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 01.09.2005; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Dangling bond; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Magnetic resonance; Magnetic resonances and relaxations in condensed matter, mössbauer effect; Physics; Recombination; Silicon; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Recombination; Silicon; Dangling bond; Magnetic resonance; Inorganic compounds; Electrically detected magnetic resonance; Interfaces; Dangling bonds; Silicon oxides; Amorphous hydrogenated material; Hydrogen additions; Microcrystal; Low temperature
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.01.050

In the past, pulsed electrically detected magnetic resonance experiments (pEDMR) with silicon dangling bonds (db) in hydrogenated microcrystalline silicon (μc-Si:H) showed that at low temperatures, two db recombination mechanisms exist where electrons are captured (i) by dbs directly (db-dc) or (ii) via band-tail states (tail-db). Here, similar experiments on hydrogenated amorphous silicon (a-Si:H) and crystalline silicon/silicondioxide interfaces (c-Si/SiO 2) are presented. They show that at low temperatures, only the db-dc is detectable at dbs in the c-Si/SiO 2 interface (Pb centers) while in a-Si:H, only tail-db processes are observed.