Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a...

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Published inChinese physics B Vol. 20; no. 4; pp. 446 - 455
Main Author 林鑫 王海龙 潘晖 许怀哲
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2011
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/4/047302

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Summary:The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a direct or an indirect bandgap semiconductor could be realized in a single-layer graphene under some specific configurations of the electric and magnetic field arrangement. Due to the bandgap generated in the single-layer graphene, the Klein tunneling observed in pristine graphene is completely suppressed.
Bibliography:gap opening at Dirac point, single-layer graphene, electric and magnetic superlattice second-order perturbation
11-5639/O4
O441
TQ58
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/4/047302