Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

• Published in: Journal of electronic materials Vol. 39; no. 5; pp. 608 - 611
• Main Authors: Ben-Yaacov, Tammy, Ive, Tommy, Van de Walle, Chris G., Mishra, Umesh K., Speck, James S., Denbaars, Steven P.
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.05.2010; Springer Nature B.V
• Subjects: Characterization and Evaluation of Materials; Chemical vapor deposition; Chemistry and Materials Science; Electric properties; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Semiconductor doping; Solid State Physics; Thin films; Zinc oxides; indium doping; metalorganic chemical vapor deposition; ZnO:In; doping; ZnO; electrical characterization; growth; crystal growth; type; MOCVD; zinc oxide; thin films
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-009-1022-x

We investigated the properties of indium-doped zinc oxide layers grown by metalorganic chemical vapor deposition on semi-insulating GaN(0001) templates. Specular and transparent films were grown with n -type carrier concentrations up to 1.82 × 10 19  cm −3 as determined by Hall measurements, and all In-doped films had carrier concentrations significantly higher than that of a comparable undoped film. For low In flows, the carrier concentration increased accordingly with trimethyl-indium (TMIn) flow until a maximum carrier concentration of 1.82 × 10 19  cm −3 was realized. For higher In flows, the carrier concentration decreased with increasing TMIn flow rate. Sheet resistance as low as 185 Ω/sq was achieved for the In-doped films, which is a significant decrease from that of a comparable undoped ZnO film. Our n -type doping studies show that In is an effective dopant for controlling the n -type conductivity of ZnO.