Optical properties of one- and two-dimensional excitons in m-plane ZnO/MgZnO multiple quantum wells

Five pairs of ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) with fixed barrier thickness of 55 nm and three well widths of 4, 8 and 16 nm have been grown on m-plane sapphires by pulsed laser deposition. Due to 2D quantum confinement with decreasing well width, the emission of excitons bound to the b...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 49; no. 9; pp. 95105 - 95113
Main Authors Chen, H R, Tsai, C Y, Huang, Y C, Kuo, C C, Hsu, H C, Hsieh, W F
Format Journal Article
LanguageEnglish
Published IOP Publishing 09.03.2016
Subjects
basal-plane stacking faults
Coupling
Emission
exciton
Excitons
heterostructure
Optical properties
Phonons
quantum well
Quantum wells
Two dimensional
Zinc oxide
Online AccessGet full text

Cover

More Information
Summary:Five pairs of ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) with fixed barrier thickness of 55 nm and three well widths of 4, 8 and 16 nm have been grown on m-plane sapphires by pulsed laser deposition. Due to 2D quantum confinement with decreasing well width, the emission of excitons bound to the basal-plane stacking faults, which are one-dimensionally confined in MQWs, encounters larger blue shift than that of the near-band edge excitons. Furthermore, remarkably reducing coupling of free excitons with A1 longitudinal optical phonons is closely correlated with increasing exciton binding energy but enhanced coupling of E2-low phonons is a result of increasing interaction with the interface phonons with decreasing well width.
Bibliography:JPhysD-106357.R1
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/49/9/095105