MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response
A Mg 0.48Zn 0.52O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase with high crystal quality from X-ray diffraction measurements. A metal–semiconductor–metal (MSM) structured photodetector was fabricated on th...
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| Published in | Solid state communications Vol. 149; no. 45; pp. 2021 - 2023 |
|---|---|
| Main Authors | , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Kidlington
Elsevier Ltd
01.12.2009
Elsevier |
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| Abstract | A Mg
0.48Zn
0.52O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase with high crystal quality from X-ray diffraction measurements. A metal–semiconductor–metal (MSM) structured photodetector was fabricated on the film. The device exhibits a peak response of 268 nm with a cutoff wavelength at 283 nm. Rise and decay times of 10 ns and 150 ns, respectively, are obtained with a load resistance of
50
Ω
. The pulse response for the device is limited by the
RC time constant. |
|---|---|
| AbstractList | A Mg(0.48)Zn(0.52)O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase with high crystal quality from X-ray diffraction measurements. A metal-semiconductor-metal (MSM) structured photodetector was fabricated on the film. The device exhibits a peak response of 268 nm with a cutoff wavelength at 283 nm. Rise and decay times of 10 ns and 150 ns, respectively, are obtained with a load resistance of [MathML equation]. The pulse response for the device is limited by the RC time constant. A Mg 0.48Zn 0.52O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase with high crystal quality from X-ray diffraction measurements. A metal–semiconductor–metal (MSM) structured photodetector was fabricated on the film. The device exhibits a peak response of 268 nm with a cutoff wavelength at 283 nm. Rise and decay times of 10 ns and 150 ns, respectively, are obtained with a load resistance of 50 Ω . The pulse response for the device is limited by the RC time constant. |
| Author | Zhang, J.Y. Shan, C.X. Yao, B. Zhang, Z.Z. Shen, D.Z. Ju, Z.G. Zheng, J. Zhao, D.X. Li, B.H. Wang, L.K. |
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| Keywords | C. Metal–semiconductor–metal B. MOCVD 73.40.Sx 81.15.Gh 72.40. +w A. Semiconductors C. Fast response Spectral response Cubic lattices Semiconductor materials C. Metal-semiconductor-metal MSM structure X ray diffraction MOCVD Photodetector Thin film Magnesium Zinc Oxides Mixed |
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| Snippet | A Mg
0.48Zn
0.52O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase... A Mg(0.48)Zn(0.52)O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase... |
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| SubjectTerms | A. Semiconductors Applied sciences B. MOCVD C. Fast response C. Metal–semiconductor–metal Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| Title | MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response |
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