MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response

• Published in: Solid state communications Vol. 149; no. 45; pp. 2021 - 2023
• Main Authors: Wang, L.K., Ju, Z.G., Shan, C.X., Zheng, J., Shen, D.Z., Yao, B., Zhao, D.X., Zhang, Z.Z., Li, B.H., Zhang, J.Y.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.12.2009; Elsevier
• Subjects: A. Semiconductors; Applied sciences; B. MOCVD; C. Fast response; C. Metal–semiconductor–metal; Electronics; Exact sciences and technology; Optoelectronic devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; C. Metal–semiconductor–metal; B. MOCVD; 73.40.Sx; 81.15.Gh; 72.40. +w; A. Semiconductors; C. Fast response; Spectral response; Cubic lattices; Semiconductor materials; C. Metal-semiconductor-metal; MSM structure; X ray diffraction; MOCVD; Photodetector; Thin film; Magnesium Zinc Oxides Mixed
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2009.08.030

A Mg 0.48Zn 0.52O thin film was deposited on a sapphire substrate by metal-organic chemical vapor deposition, and the thin film exhibits a single cubic phase with high crystal quality from X-ray diffraction measurements. A metal–semiconductor–metal (MSM) structured photodetector was fabricated on the film. The device exhibits a peak response of 268 nm with a cutoff wavelength at 283 nm. Rise and decay times of 10 ns and 150 ns, respectively, are obtained with a load resistance of 50 Ω . The pulse response for the device is limited by the RC time constant.