Die bonding with Au/In isothermal solidification technique

• Published in: Journal of electronic materials Vol. 29; no. 4; pp. 443 - 447
• Main Authors: WANG, T. B, SHEN, Z. Z, YE, R. Q, XIE, X. M, STUBHAN, F, FREYTAG, J
• Format: Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01.04.2000; Springer Nature B.V
• Subjects: Applied sciences; Bonding strength; Condensed matter: structure, mechanical and thermal properties; Degradation; Electronics; Exact sciences and technology; Impurity doping, diffusion and ion implantation technology; Mechanical and acoustical properties; Microelectronic fabrication (materials and surfaces technology); Physical properties of thin films, nonelectronic; Physics; Reliability analysis; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Shear strength; Silicon; Solidification; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Isothermal condition; Gold; Rupture; Shear strength; Interdiffusion; Experimental study; Indium; Chip; Solidification; Wafer bonding; Microelectronic fabrication; Reliability; Strength
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-000-0158-5

A gold-indium isothermal solidification technique has been developed for die bonding. Both silicon on silicon and silicon on alloy 42 (chip size 2 × 2 mm2) are investigated. For silicon on silicon, the bonding is performed at 200°C within 30 sec. The bonds can withstand 1,500 cycles of temperature cycle between −65°C and 150°C without any degradation. For silicon on alloy 42, the bonding is done at 250°C within 5 sec. The bonds can pass the shear strength test specified by MIL STD 883D, Method 2019.5. The reliability of the bonds is evaluated by thermal cycle testing. After 500 cycles between −65°C and 150°C, only slight degradation was observed.