Simulation of surface evolution of quantum dot using meshfree approximation

• Published in: Thin solid films Vol. 479; no. 1; pp. 297 - 309
• Main Authors: Quek, S.S., Liu, G.R.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 23.05.2005; Elsevier Science
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Meshfree interpolation; Methods of nanofabrication; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum dot; Quantum dots; Self-assembly; Simulation; Quantum dot; Self-assembly; Meshfree interpolation; Simulation; Inorganic compounds; Crystal orientation; Quantum dots; Digital simulation; Transition element compounds; Theoretical study; Binary compounds; Surface diffusion; Cadmium selenides; Thickness; Time dependence; II-VI semiconductors; Anisotropy; Stranski-Krastanow growth mode; Morphology; Nanostructured materials
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.11.183

An ideal way of fabricating quantum dots is by self-assembly that can be simulated using the Stranski–Krastanow growth mode. This paper presents a numerical scheme to simulate the morphology of the quantum dot “island” due to stresses induced by a buried quantum dot. The surface diffusion equation that governs epitaxial growth is solved for the normal surface velocity by using a meshfree interpolation technique—the moving least square method. The normal surface displacement is then deduced and the process is repeated through a difference scheme to obtain the change in surface shape as a function of time. Simulations using the present method have found that the island morphology is affected by various factors including elastic anisotropy, cap layer thickness and crystal orientation.