Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories

Distribution forms of abrasives in the chemical mechanical polishing（CMP） process are analyzed based on experimental results.Then the relationships between the wafer,the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics.According to the track length of abrasives o...

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Bibliographic Details
Published inJournal of semiconductors Vol. 31; no. 5; pp. 145 - 150
Main Author 苏建修 陈锡渠 杜家熙 康仁科
Format Journal Article
LanguageChinese
English
Published IOP Publishing 01.05.2010
Subjects
CMP
分布形式
化学机械抛光
抛光速度
晶圆
材料去除机理
材料去除率
颗粒
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Summary:Distribution forms of abrasives in the chemical mechanical polishing（CMP） process are analyzed based on experimental results.Then the relationships between the wafer,the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics.According to the track length of abrasives on the wafer surface,the relationships between the material removal rate and the polishing velocity are obtained.The analysis results are in accord with the experimental results.The conclusion provides a theoretical guide for further understanding the material removal mechanism of wafers in CMP.
Bibliography:chemical mechanical polishing
chemical mechanical polishing; material removal mechanism; abrasive; material removal rate
material removal rate
TN305.2
TG580.6
material removal mechanism
abrasive
11-5781/TN
ISSN:1674-4926
DOI:10.1088/1674-4926/31/5/056002