An improved analytical model for the statistics of SET emergence point in HfO2 memristive device

In this work, an improved analytical model for the SET switching statistics of HfO2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the d...

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Bibliographic Details
Published inAIP advances Vol. 9; no. 2; pp. 025118 - 025118-6
Main Authors Xiang, Dong, Zhang, Rulin, Li, Yu, Ye, Cong, Miranda, Enrique, Suñé, Jordi, Long, Shibing
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.02.2019
AIP Publishing LLC
Subjects
Emergence
Hafnium oxide
Mathematical models
Percolation
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Summary:In this work, an improved analytical model for the SET switching statistics of HfO2 memristive device is developed from the cell-based percolation model. The statistical results of the SET emergence point related to the beginning stage during SET process are systematically discussed. Moreover, the deviation from Weibull model in high percentiles region is found to originate from the uneven distribution of defect density. Our improved model exhibits excellent consistency with experimental results in Cu/HfO2/Pt device. Besides, we explain the relationship between the parameters of the model and SET resistance. The underlying mechanism of SET process for HfO2 memristive device is fully illuminated.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5085685