Direct observation of thermal alteration of mixed film of Ge and SiO

• Published in: Thin solid films Vol. 483; no. 1; pp. 396 - 399
• Main Authors: Kaito, C., Kamitsuji, K., Tanaka, S., Kido, O., Kurumada, M., Sato, T., Kimura, Y., Suzuki, H., Saito, Y.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.07.2005; Elsevier Science
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Germanium; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nanostructures; Physics; Silicon oxide; Transmission electron microscopy (TEM); Vapor phase epitaxy; growth from vapor phase; 61.16.Bg; 68.60.Dv; Silicon oxide; Germanium; 61.82.Rx; Nanostructures; Transmission electron microscopy (TEM); Ultrathin films; Temperature dependence; Inorganic compounds; Electron diffraction; Crystallization; Amorphous state; Evaporation; Experimental study; 68.60.Dv Germanium; Thin films; Image analysis; Diamond lattices; Transmission electron microscopy; Silicon oxides; Growth mechanism; Nanostructured materials; Nanocrystal
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.12.039

The dynamic behavior of a film produced by coevaporation of Ge–SiO was observed in situ using a transmission electron microscope. The film produced had an amorphous structure containing Si, Ge and SiO 2. A characteristic change of the film was observed above 500 °C. Upon heating at 750 °C, in addition to the growth of the SiGe mixed crystal with the diamond structure, the liquidlike mixed phase of SiGe–SiO 2 was also produced. The growth process of the liquidlike phase was directly observed in situ. The growth process of Ge and GeSi nanocrystallites has been elucidated by cooling the mixed film to room temperature.