A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential soluti...

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Bibliographic Details
Published inChinese physics B Vol. 20; no. 1; pp. 501 - 506
Main Author 何进 刘峰 周幸叶 张健 张立宁
Format Journal Article
LanguageEnglish
Published IOP Publishing 2011
Subjects
危险品
双栅MOSFET
掺杂浓度
泊松方程
连续分析
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Summary:A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.
Bibliography:TN383.1
TN386.1
MOSFETs, transistors, doping, modeling, double-gate （DG）
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/1/016102