Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

• Published in: Chinese physics B Vol. 20; no. 1; pp. 566 - 572
• Main Author: 刘红侠 李劲 李斌 曹磊 袁博
• Format: Journal Article
• Language: English
• Published: IOP Publishing 2011
• Subjects: MOSFET; 二维分析; 全耗尽; 应变硅; 模型验证; 短沟道效应; 非对称
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/20/1/017301

This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two...