Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

• Published in: Chinese physics B Vol. 20; no. 1; pp. 566 - 572
• Main Author: 刘红侠 李劲 李斌 曹磊 袁博
• Format: Journal Article
• Language: English
• Published: IOP Publishing 2011
• Subjects: MOSFET; 二维分析; 全耗尽; 应变硅; 模型验证; 短沟道效应; 非对称
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/20/1/017301

This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and draininduced barrier-lowering of CMOS-based devices in nanometre scale.