A scaling theory for fully-depleted, surrounding-gate MOSFET’s: including effective conducting path effect

• Published in: Microelectronic engineering Vol. 77; no. 2; pp. 175 - 183
• Main Author: Chiang, T.K.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2005; Elsevier Science
• Subjects: Applied sciences; Effective conducting path effect; Electronics; Exact sciences and technology; Natural length; Scaling factor; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SG MOSFET’s; Subthreshold swing; Transistors; SG MOSFET’s; Natural length; Scaling factor; Effective conducting path effect; Subthreshold swing; MOSFET; Circuit simulation; Transistor gate; Poisson equation; GAA transistor; SG MOSFET's; Layer thickness; Silicon on insulator technology; Scaling law; Experimental result; Length
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2004.10.005

A scaling theory for fully-depleted surrounding-gate (SG) MOSFET’s is derived, which gives a basic idea how the effective conducting path affects the scaling theory. By investigating the subthreshold conducting phenomenon of SG MOSFET’s, the effective conducting path effect (ECPE) is employed to obtain the natural length λ 4 which is relevant to the scaling equation. With various substrate concentrations, the minimum channel potential Φ d eff , min induced by effective conducting path shows the novel scaling factor α 4. Compared to conventional scaling rule, our model accounts for doping effect and hence provides a unified scaling rule for fully-depleted SG SOI MOSFET’s.