Edge-emitting semiconductor laser subject to nonsinusoidal excitation from three-dimensional autonomous system: numerical and electronic models analysis

The edge-emitting semiconductor laser powered by Sifeu et al. oscillator is studied numerically. An electronic/analog model of the system is constructed in order to imitate the behavior of the material model. Period-doubling to chaos, is obtained when varying the amplitude of the reverse bias satura...

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Bibliographic Details
Published inOptical and quantum electronics Vol. 47; no. 10; pp. 3405 - 3417
Main Authors Foutse, Momo, Woafo, Paul
Format Journal Article
LanguageEnglish
Published New York Springer US 01.10.2015
Subjects
Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Period-doubling route to chaos
Edge-emitting semiconductor laser
Sifeu et al. oscillator
Analog model of semiconductor lasers
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Summary:The edge-emitting semiconductor laser powered by Sifeu et al. oscillator is studied numerically. An electronic/analog model of the system is constructed in order to imitate the behavior of the material model. Period-doubling to chaos, is obtained when varying the amplitude of the reverse bias saturation current. The experimental results show agreement with those obtained numerically.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-015-0216-0