Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

• Published in: Microelectronic engineering Vol. 83; no. 2; pp. 241 - 246
• Main Authors: Granzner, R., Polyakov, V.M., Schwierz, F., Kittler, M., Luyken, R.J., Rösner, W., Städele, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2006; Elsevier Science
• Subjects: Applied sciences; Double-gate MOSFET; Drift-diffusion model; Electronics; Exact sciences and technology; Hydrodynamic model; Miscellaneous; Monte Carlo method; Nanometer MOSFET; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Simulation; SOI MOSFET; Transistors; Monte Carlo method; Simulation; Drift-diffusion model; Nanometer MOSFET; Double-gate MOSFET; SOI MOSFET; Hydrodynamic model; Waveform; MOSFET; Transport properties; Voltage current curve; Circuit simulation; Transfer characteristic; Dual gate transistor; Silicon on insulator technology; Nanometer scale; Experimental result; Comparative study
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2005.08.003

The dc behavior of single-gate and double-gate MOSFETs with gate lengths ranging from 5 to 100 nm is simulated using drift-diffusion, hydrodynamic, and Monte Carlo approaches. It is shown that by simple adjustments of the drift-diffusion and hydrodynamic transport model parameters the Monte Carlo currents can be reproduced in the entire gate length range. The suitability of the different simulation methods for the simulation of nanometer MOSFETs is briefly discussed.